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 Ordering number : ENN8294
TN6Q04
ExPD (Excellent Power Device)
TN6Q04
Features
* * * * *
Quasi-Resonant Switching Power Supply ExPD
Quasi-resonant type original control IC. High voltage power MOSFET with current sense. Low input voltage protection (self reset) Overvoltage protection (latch). Overcurrent protection (pulse-by-pulse).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDD Pin Applied Voltage FB Pin Applied Voltage EDGE Pin Applied Voltage Allowable Power Dissipation Operating Temperature Junction Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS ID IDP VDD VFB VEDGE PD Topr Tj Tstg EAS IAV 3-5 3-5 3-5 3-5 3-5 4-5 1-5 2-5 Tc=25C PW10s, duty cycle1% Conditions Ratings 650 5.5 16.5 --0.3 to 16.7 --0.3 to VDD+0.3 --0.3 to VDD+0.3 2 35 --25 to +125 150 --55 to +150 155 5.5 unit V A A V V V W W C C C mJ A [All voltage parameters are absolute voltage referenced to GND]
*1 VDD=50V, L=10mH, IAV=5.5A *2 L10mH, single pulse
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505IQ TS IM TB-00001322 No.8294-1/4
TN6Q04
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance [IC] Power Supply Line Breakdown Voltage Overvoltage Input Latch Shutdown Threshold Voltage Burst Mode Start Threshold Voltage Burst Mode Stop Threshold Voltage Burst Mode Hysteresis Voltage Low Voltage Protection ReleaseThreshold Voltage (Latch Reset Threshold Voltage) Low Voltage Protection Operation Threshold Voltage Low Voltage Protection Hysteresis Voltage Feedback Detection Threshold Voltage Edge Signal Release Threshold Voltage Edge Signal Detection Threshold Voltage Edge Signal Hysteresis Voltage Reference Oscillation Frequency Maximum Oscillation Frequency Power Supply Current (at start-up) Minimum ON Time Step Drive Voltage Step Drive Gate Voltage V(BR)DD OVP VBon VBoff VB UVH UVL UV VFB VEDGE-H VEDGE-L VEDGE fosc fmax IDD(on) ton(min) tstep VGstep 4-5 IDD=1mA, VFB=0 4-5 4-5 VEDGE=VDD 4-5 VEDGE=VDD 4-5 VEDGE=VDD 4-5 4-5 4-5 1-5 2-5 2-5 2-5 3-5 VEDGE=0 3-5 4-5 3-5 3-5 3-5 30 150 0.58 2.3 1.6 16.7 15.7 15.2 14.6 16.5 16.0 15.4 0.6 9.1 8.0 9.9 8.8 1.1 0.70 2.6 1.9 0.7 35 180 200 300 200 VDD--5.7 40 210 0.82 2.9 2.2 10.7 9.6 17.3 16.8 16.2 V V V V V V V V V V V V kHz kHz A ns ns V V(BR)DSS IDSS RDS(on) Ciss Coss 3-5 ID=1mA, VDD=0 3-5 VDS=650V, VDD=0 3-5 ID=2.8A, VDD=15V VDS=20V, f=1MHz VDS=20V, f=1MHz 650 1 1.2 1450 250 1.6 V mA pF pF Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 2249
10.0 4.5 3.2 2.8
3.5
16.0
7.2
2.4
(5.3)
(4.0)
0.7 (0.9) 1.5 3.0 6.5
0.9
2.54 1.27 12
3 45
2.54 1.27
13.3
0.5
10.3
1.27 2.54
1.27 2.54
6.0
1 : FB 2 : EDGE 3 : DRAIN 4 : VDD 5 : SOURCE SANYO : TO-220FI5H
No.8294-2/4
TN6Q04
Block Diagram
VDD pin EDGE pin
4
Internal power supply
Undervoltage protection
2
Falling edge detection Overvoltage protection Reference voltage
Oscillator
Latch circuit Burst circuit
3
DRAIN pin
Overcurrent / FB comparator
Logic
Driver FB pin 1 5 SOURCE (GND) pin
Pin Definitions and Functions
Pin No. 1 2 3 4 5 Symbol FB EDGE DRAIN VDD SOURCE (GND) Name Overcurrent / feedback terminal EDGE dtection terminal DRAIN terminal Power supply terminal Source (Ground) terminal Delay EDGE voltage input Power MOSFET drain Input for start-up voltage and drive voltage Power MOSFET source (ground) Function Overcurrent detection / voltage control input
Sample Application Circuit
Starting resistors Voltage resonance capacitor Snubber circuit
+B +
5
+
4
OCP Input voltage compensation resistor
3
2
GND
1 + Error amplifier
FB / OCP adjusting resistor
VCC circuit
Delay time setting capacitor and resistor
No.8294-3/4
TN6Q04
3 2 10 7 5
Forward Bias ASO
IDP=16.5A ID=5.5A
1m
10
10 m 1 DC 00m s op s era tio n
s
0 s
Allowable Power Dissipation, PD -- W
<10s 10 s
2.5
PD -- Ta
2.0
Drain Current, ID -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
1.5
Operation in this area is limited by RDS(on).
1.0
0.5
0.01 1.0
Tc=25C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3
0 5 7 1000 IT09263 0 20 40 60 80 100 120 140 160
Drain-to-Source Voltage, VDS -- V
40
Ambient Temperature, Ta -- C
IT09261
PD -- Tc
Allowable Power Dissipation, PD -- W
35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
IT09264
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice.
PS No.8294-4/4


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